Investigation on High Switching Performances Graphene Transistors Using Band-gap Engineering
| dc.contributor.author | Benfdila, Arezki | |
| dc.contributor.author | Lakhlef, Ahcene | |
| dc.date.accessioned | 2020-06-28T10:07:37Z | |
| dc.date.available | 2020-06-28T10:07:37Z | |
| dc.date.issued | 17/07/2019 | |
| dc.description.abstract | Graphene transistors are considered to be the successor’s basic element for the next generation of advanced integrated circuits. The graphene suffers from the absence of energy band gap to experience a semiconductor like characteristics. In order to instigate a bandgap, several techniques are used to beak symmetry. The most useful graphene sheet is the Graphene Nanoribbon (GNR). The present paper deals with the investigation on the bandgap engineering approach aiming an increase of the switching characteristics of the graphene transistors. The GNR sheets are synthesized using different techniques yielding controlled electronics and physical characteristics | en |
| dc.identifier.uri | https://dspace.ummto.dz/handle/ummto/11399 | |
| dc.language.iso | en | en |
| dc.title | Investigation on High Switching Performances Graphene Transistors Using Band-gap Engineering | en |
| dc.type | Working Paper | en |
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